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IRF3805SPBF

IRF3805SPBF

IRF3805SPBF

Infineon Technologies

IRF3805SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3805SPBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 890A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 940 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.69000 $4.69
10 $4.21600 $42.16
100 $3.50400 $350.4
500 $2.88716 $1443.58
1,000 $2.47591 $2.47591
IRF3805SPBF Product Details

IRF3805SPBF Description


IRF3805SPBF is a 55v HEXFET? Power MOSFET. This HEXFET Power MOSFET IRF3805SPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRF3805SPBF an extremely efficient and reliable device for use in a wide variety of applications.



IRF3805SPBF Features


  •  Advanced Process Technology

  •  Ultra-Low On-Resistance

  •  175°C Operating Temperature

  •  Fast Switching

  •  Repetitive Avalanche Allowed up to Tjmax

  •  Lead-free



IRF3805SPBF Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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