Name: SPB80N06S08ATMA1
Brand: Infineon Technologies
SKU: SPB80N06S08ATMA1
Price: 1.87000 USD
Availability: InStock

new-10%

SPB80N06S08ATMA1

Manufacturer part number:SPB80N06S08ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:SPB80N06S08ATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 240μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	187nC @ 10V
Rise Time	53ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.0077Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

About SPB80N06S08ATMA1

The SPB80N06S08ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPB80N06S08ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.