SPB80N06S08ATMA1

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Manufacturer part number:SPB80N06S08ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:SPB80N06S08ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 240μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	187nC @ 10V
Rise Time	53ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.0077Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead