IRF5802TR

new-10%

Manufacturer part number:IRF5802TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 0.9A 6-TSOP

Case Package:SOT-23

Datasheet:IRF5802TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 540mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	88pF @ 25V
Current - Continuous Drain (Id) @ 25°C	900mA Ta
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Drain to Source Voltage (Vdss)	150V
JEDEC-95 Code	MO-193AA
Drain Current-Max (Abs) (ID)	0.9A
Pulsed Drain Current-Max (IDM)	7A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	9.5 mJ
Power Dissipation-Max (Abs)	2W
RoHS Status	Non-RoHS Compliant