SI4484EY-T1-E3

new-10%

Manufacturer part number:SI4484EY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 4.8A 8-SOIC

Case Package:SOT-23

Datasheet:SI4484EY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	34mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Power Dissipation	1.8W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	34mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	4.8A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	6.9A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	34mOhm
Rds On Max	34 mΩ
Nominal Vgs	2 V
Height	1.55mm
Length	5mm
Width	4mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free