FQA28N50F Description

The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices work well in basic full-bridge topologies, phase-shift ZVS, and high-efficiency switch mode power supply that utilize the body diode.

FQA28N50F Features

• 28.4A, 500V, RDS(on) = 0.16? @VGS = 10 V

• Low gate charge ( typical 110 nC)

• Low Crss ( typical 60 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode ( max, 250ns )

FQA28N50F Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial