IRF6621TR1

new-10%

Manufacturer part number:IRF6621TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 12A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6621TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	7
Supplier Device Package	DIRECTFET™ SQ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	12A
Power Dissipation-Max	2.2W Ta 42W Tc
Power Dissipation	2.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.1mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1460pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.1 ns
Turn-Off Delay Time	16 ns
Reverse Recovery Time	9.8 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	1.46nF
Drain to Source Resistance	7mOhm
Rds On Max	9.1 mΩ
Nominal Vgs	1.8 V
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free