SFP9630 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
SFP9630 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
70W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
800mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
965pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.5A Tc
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
SFP9630 Product Details
SFP9630 Description
Advanced Power Technologies (Bend,OR) recently announced a new RF MOSFET optimized for high-power Class C, D and E operations from 1 MHz to 120 MHz. According to the company, FARF450 is a pair of matched RF power MOSFET with a common source configuration.
SFP9630 Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10 mA (Max.) @ VDS = -200V
Low RDS(ON) : 0.581 W (Typ.)
SFP9630 Applications
high-power Class C, D and E operations from 1 MHz to 120 MHz