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SFP9630

SFP9630

SFP9630

ON Semiconductor

SFP9630 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

SFP9630 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 70W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 965pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
SFP9630 Product Details

SFP9630  Description

 Advanced Power Technologies (Bend,OR) recently announced a new RF MOSFET optimized for high-power Class C, D and E operations from 1 MHz to 120 MHz. According to the company, FARF450 is a pair of matched RF power MOSFET with a common source configuration.


SFP9630   Features


Avalanche Rugged Technology

 Rugged Gate Oxide Technology

 Lower Input Capacitance

 Improved Gate Charge

 Extended Safe Operating Area

 Lower Leakage Current : -10 mA (Max.) @ VDS = -200V

 Low RDS(ON) : 0.581 W (Typ.)

 

SFP9630   Applications

 

high-power Class C, D and E operations from 1 MHz to 120 MHz

 


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