IRFHM9331TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFHM9331TR2PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Supplier Device Package
PQFN (3x3)
Packaging
Cut Tape (CT)
Published
2011
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.8W
Turn On Delay Time
11 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id
2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1543pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Rise Time
27ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
-11A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Input Capacitance
1.543nF
Recovery Time
96 ns
Drain to Source Resistance
14.6mOhm
Rds On Max
10 mΩ
Nominal Vgs
-1.8 V
Height
939.8μm
Length
2.9972mm
Width
2.9972mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRFHM9331TR2PBF Product Details
IRFHM9331TR2PBF Description
IRFHM9331TR2PBF emerges as a member of HEXFET? power MOSFET provided by Infineon Technologies. It is compatible with existing surface mount techniques, thus it can be manufactured in an easier way. Low thermal resistance to PCB (<6.0??C/W) enables better thermal dissipation. As a result, IRFHM9331TR2PBF is well suited for system/load switches.