PHT4NQ10LT,135

new-10%

Manufacturer part number:PHT4NQ10LT,135

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 100V 3.5A SC73

Case Package:SOT-23

Datasheet:PHT4NQ10LT,135 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	6.9W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 1.75A, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	374pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.5A Tc
Gate Charge (Qg) (Max) @ Vgs	12.2nC @ 5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	3.5A
Drain-source On Resistance-Max	0.25Ohm
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant