IRF6629TR1PBF

new-10%

Manufacturer part number:IRF6629TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 29A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6629TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	2.1MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Current Rating	29A
Power Dissipation-Max	2.8W Ta 100W Tc
Power Dissipation	100W
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4260pF @ 13V
Current - Continuous Drain (Id) @ 25°C	29A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 4.5V
Rise Time	67ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.4 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	23A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	4.26nF
Drain to Source Resistance	2.7mOhm
Rds On Max	2.1 mΩ
Nominal Vgs	1.8 V
Height	506μm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free