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IRFH5204TR2PBF

IRFH5204TR2PBF

IRFH5204TR2PBF

Infineon Technologies

MOSFET N-CH 40V 22A PQFN

SOT-23

IRFH5204TR2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Supplier Device Package PQFN (5x6)
Packaging Cut Tape (CT)
Published 2011
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.3MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.6W
Turn On Delay Time 8.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 2.46nF
Recovery Time 45 ns
Drain to Source Resistance 4.3mOhm
Rds On Max 4.3 mΩ
Nominal Vgs 4 V
Height 900μm
Length 6mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.818520 $0.81852
10 $0.772189 $7.72189
100 $0.728480 $72.848
500 $0.687245 $343.6225
1000 $0.648345 $648.345

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