IRF6636TR1PBF

new-10%

Manufacturer part number:IRF6636TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 18A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6636TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Number of Pins	3
Supplier Device Package	DIRECTFET™ ST
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	4.5MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Number of Elements	1
Power Dissipation-Max	2.2W Ta 42W Tc
Power Dissipation	42W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2420pF @ 10V
Current - Continuous Drain (Id) @ 25°C	18A Ta 81A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 4.5V
Rise Time	19ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.2 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	2.42nF
Drain to Source Resistance	6.4mOhm
Rds On Max	4.5 mΩ
Nominal Vgs	2.45 V
Height	506μm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free