IRF6655TRPBF

new-10%

Manufacturer part number:IRF6655TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 4.2A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6655TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SH
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	4.2A
JESD-30 Code	R-XBCC-N2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	7.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	11.7nC @ 10V
Rise Time	2.8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4.3 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	4.2mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.062Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	34A
Avalanche Energy Rating (Eas)	11 mJ
Height	508μm
Length	4.826mm
Width	3.9624mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free