IRF6665

new-10%

Manufacturer part number:IRF6665

Manufacturer:Infineon Technologies

Description:IRF6665 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6665 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SH
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Silver/Nickel (Ag/Ni)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	4.2A
Drain-source On Resistance-Max	0.062Ohm
Pulsed Drain Current-Max (IDM)	34A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	11 mJ
RoHS Status	Non-RoHS Compliant