NTLJF3118NTAG

new-10%

Manufacturer part number:NTLJF3118NTAG

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 20V 3.8A 6-Pin WDFN T/R

Case Package:SOT-23

Datasheet:NTLJF3118NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	265
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	271pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	3.7nC @ 4.5V
Rise Time	4.7ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	4.7 ns
Turn-Off Delay Time	11.1 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	18A
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant
Lead Free	Lead Free