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SI4642DY-T1-E3

SI4642DY-T1-E3

SI4642DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 34A 8-SOIC

SOT-23

SI4642DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Power Dissipation 3.5W
Turn On Delay Time 76 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5540pF @ 15V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 180ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 34A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 5.54nF
Drain to Source Resistance 3.75mOhm
Rds On Max 3.75 mΩ
Nominal Vgs 3 V
Height 1.55mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.525796 $0.525796
10 $0.496034 $4.96034
100 $0.467956 $46.7956
500 $0.441469 $220.7345
1000 $0.416479 $416.479

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