R5009ANJTL

new-10%

Manufacturer part number:R5009ANJTL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 500V 9A LPTS

Case Package:SOT-23

Datasheet:R5009ANJTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	50W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	720m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.72Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	5.4 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free