SIA419DJ-T1-GE3

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Manufacturer part number:SIA419DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 12A SC70-6

Case Package:SOT-23

Datasheet:SIA419DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	30MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Power Dissipation-Max	3.5W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	91 ns
Continuous Drain Current (ID)	-12A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	8.8A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	30A
Nominal Vgs	-1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free