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IRF6710S2TR1PBF

IRF6710S2TR1PBF

IRF6710S2TR1PBF

Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET

SOT-23

IRF6710S2TR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric S1
Number of Pins 6
Supplier Device Package DIRECTFET S1
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 5.9MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.8W Ta 15W Tc
Power Dissipation 1.8W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 13V
Current - Continuous Drain (Id) @ 25°C 12A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 5.2 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Input Capacitance 1.19nF
Recovery Time 21 ns
Drain to Source Resistance 11.9mOhm
Rds On Max 5.9 mΩ
Nominal Vgs 1.8 V
Height 558.8μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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