IRF6710S2TRPBF

new-10%

Manufacturer part number:IRF6710S2TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 12A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6710S2TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 15W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	15W
Case Connection	DRAIN
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 13V
Current - Continuous Drain (Id) @ 25°C	12A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	5.2 ns
Continuous Drain Current (ID)	12mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0059Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	24 mJ
Height	558.8μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	RoHS Compliant