IRF9Z10

new-10%

Manufacturer part number:IRF9Z10

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 60V 6.7A TO220AB

Case Package:SOT-23

Datasheet:IRF9Z10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.7A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	63ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	6.7A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	270pF
Drain to Source Resistance	500mOhm
Rds On Max	500 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant