IRF6717MTR1PBF Description

The IRF6717MPbF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to produce the lowest on-state resistance in a SO-8-sized device with a 0.7 mm profile. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling in power systems, resulting in an 80 percent increase in thermal resistance over the previous best.

IRF6717MTR1PBF Features

• RoHs Compliant and Halgen Free

• Low Profile (<0.7 mm)

• Dual Sided Cooling Compatible

• Ultra Low Package Inductance

• Optimized for High Frequency Switching

• Ideal for CPU Core DC-DC Converters

• Optimized for Sync. FET socket of Sync. Buck Converter

• Low Conduction and Switching Losses

• Compatible with existing Surface Mount Techniques

• 100% Rg tested 

IRF6717MTR1PBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial