IRF6727MTR1PBF

new-10%

Manufacturer part number:IRF6727MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6727MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Single
Power Dissipation	2.8W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	6190pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 4.5V
Rise Time	31ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	6.19nF
Recovery Time	41 ns
Drain to Source Resistance	2.4mOhm
Rds On Max	1.7 mΩ
Nominal Vgs	1.8 V
Height	508μm
Length	5.45mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant