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IRF6728MTR1PBF

IRF6728MTR1PBF

IRF6728MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

SOT-23

IRF6728MTR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 75W Tc
Power Dissipation 75W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 140A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.11nF
Drain to Source Resistance 3.6mOhm
Rds On Max 2.5 mΩ
Nominal Vgs 1.8 V
Height 530μm
Length 5.45mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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