IRF6797MTR1PBF

new-10%

Manufacturer part number:IRF6797MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 36A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6797MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	2.4MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Power Dissipation	2.8W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5790pF @ 13V
Current - Continuous Drain (Id) @ 25°C	36A Ta 210A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	36A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	5.79nF
Recovery Time	45 ns
Drain to Source Resistance	2.4mOhm
Rds On Max	1.4 mΩ
Nominal Vgs	1.8 V
Height	508μm
Length	5.45mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free