IRF7104TRPBF

new-10%

Manufacturer part number:IRF7104TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2P-CH 20V 2.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7104TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	250mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Voltage - Rated DC	-20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-2.3A
Base Part Number	IRF7104PBF
Number of Elements	2
Row Spacing	6.3 mm
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	12 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.3A
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	-2.3A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	10A
Dual Supply Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	100 ns
FET Feature	Logic Level Gate
Nominal Vgs	-3 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free