SSM6N815R,LF

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Manufacturer part number:SSM6N815R,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:SSM6N815R,LF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:SSM6N815R,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	1.8W Ta
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	103m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 4.5V
Drain to Source Voltage (Vdss)	100V
FET Feature	Logic Level Gate, 4V Drive
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.15035	$0.45105
6,000	$0.14065	$0.8439
15,000	$0.13580	$2.037

SSM6N815R, LF Description

SSM6N815R, LF is a 100v Silicon N-Channel MOSFET. The transistor SSM6N815R, LF can be applied in Power Management Switches due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SSM6N815R, LF is in the TSOP6F package with 1.4W Power dissipations.