SQ3585EV-T1_GE3

new-10%

Manufacturer part number:SQ3585EV-T1_GE3

Manufacturer:Vishay Siliconix

Description:Trans Mosfet N/p-ch 20V 3.57A/2.5A 6-PIN TSOP T/r

Case Package:SOT-23

Datasheet:SQ3585EV-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SEPARATE, 2 ELEMENTS
Operating Mode	ENHANCEMENT MODE
Power - Max	1.67W
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	77m Ω @ 1A, 4.5V, 166m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.57A Tc 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V, 3.5nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	3.57A
Drain-source On Resistance-Max	0.12Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	Non-RoHS Compliant