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IRF7341TRPBF

IRF7341TRPBF

IRF7341TRPBF

Infineon Technologies

IRF7341TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7341TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.7A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRF7341PBF
Number of Elements 2
Row Spacing 6.3 mm
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 3.2ns
Fall Time (Typ) 13 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.1A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 140 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 90 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
IRF7341TRPBF Product Details
IRF7341TRPBF Description


International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
The SO-8 has been upgraded thermally and has multiple-die capability thanks to a redesigned leadframe, making it appropriate for a range of power applications. Multiple devices can be employed in an application with significantly less board space thanks to these enhancements. The container is suitable for vapor phase, infrared, and wave soldering.
In a typical PCB mount application, power dissipation of more than 0.8W is achievable.

IRF7341TRPBF Features


Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free

IRF7341TRPBF Applications


Power application

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