IRFI744GPBF

new-10%

Manufacturer part number:IRFI744GPBF

Manufacturer:Vishay Siliconix

Description:VISHAY IRFI744GPBF MOSFET Transistor, N Channel, 4.9 A, 450 V, 630 mohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:IRFI744GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Turn On Delay Time	8.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	630mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.9A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	450V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	4.9A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.4nF
Drain to Source Resistance	630mOhm
Rds On Max	630 mΩ
Height	9.8mm
Length	10.63mm
Width	4.83mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant