PHD23NQ10T,118 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 93 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1187pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 23A.Peak drain current is 92A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

PHD23NQ10T,118 Features

the avalanche energy rating (Eas) is 93 mJ
based on its rated peak drain current 92A.
a 100V drain to source voltage (Vdss)

PHD23NQ10T,118 Applications

There are a lot of NXP USA Inc.
PHD23NQ10T,118 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies