NVATS5A114PLZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NVATS5A114PLZT4G Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Bismuth (Sn/Bi)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
72W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
16m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
4000pF @ 20V
Current - Continuous Drain (Id) @ 25°C
60A Ta
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVATS5A114PLZT4G Product Details
NVATS5A114PLZT4G Description
NVATS5A114PLZT4G is a -60v P-Channel Power MOSFET. The onsemi NVATS5A114PLZT4G is designed for compact and efficient designs and includes high thermal performance. It can be applied in Reverse Battery Protection, Load Switch, Automotive Front Lighting, and Automotive Body Controllers application due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NVATS5A114PLZT4G is in the ATPAK-3 package with 72W power dissipation.
NVATS5A114PLZT4G Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)