SIB419DK-T1-GE3

new-10%

Manufacturer part number:SIB419DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 9A SC75-6

Case Package:SOT-23

Datasheet:SIB419DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Supplier Device Package	PowerPAK® SC-75-6L Single
Weight	95.991485mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.45W Ta 13.1W Tc
Power Dissipation	2.45W
Turn On Delay Time	16 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	60mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	562pF @ 6V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	11.82nC @ 5V
Rise Time	42ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	-9A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	12V
Input Capacitance	562pF
Drain to Source Resistance	89mOhm
Rds On Max	60 mΩ
Nominal Vgs	-1 V
Height	750μm
Length	1.6mm
Width	1.6mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant