IRF7342D2PBF Description

IRF7342D2PBF is a 55V Dual P-Channel HEXFET Power MOSFET in a SO-8 package. IRF7342D2PBF achieves extraordinarily low on-resistance per silicon area by utilizing cutting-edge production techniques. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.

IRF7342D2PBF is appropriate in a range of power applications since the SO-8 has been upgraded through a unique lead frame for improved thermal properties and multiple-die capability. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The IRF7342D2PBF package is made for infrared, vapor phase, or wave soldering processes. In a typical PCB mount application, it is possible to dissipate more power than 0.8W.

IRF7342D2PBF Features

• Capable of being wave-soldered

• Planar cell structure for wide SOA

• Optimized for broadest availability from distribution partners

• Product qualification according to JEDEC standard

• Silicon optimized for applications switching below <100KHz

• Industry-standard surface-mount power package

• RoHS Compliant

• Low RDS(on)

• Dynamic dv/dt Rating

• Fast Switching

• Dual P-Channel MOSFET

IRF7342D2PBF Applications

• High Current

• Motor Control

• Audio Amplifiers

• High-Speed Switching 

• Uninterruptible Power Supply (UPS)

• Industrial Actuators