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IRF7413ZGTRPBF

IRF7413ZGTRPBF

IRF7413ZGTRPBF

Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

SOT-23

IRF7413ZGTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.21nF
Drain to Source Resistance 10mOhm
Rds On Max 10 mΩ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant

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