IRF7853PBF

new-10%

Manufacturer part number:IRF7853PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 8.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7853PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	18MOhm
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	18m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.3A Ta
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	6.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	8.3A
Threshold Voltage	4.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Recovery Time	68 ns
Nominal Vgs	4.9 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free