IRF7501TRPBF             Description

 The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. The new Micro8 package covers only half the footprint of the standard SO-8, making it the smallest footprint available in the SOIC outline. This makes Micro8 an ideal device for applications with limited space on printed circuit boards. The ultra-thin shape of the Micro8 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards.

IRF7501TRPBF        Features

Generation V Technology

 Ulrtra Low On-Resistance

 Dual N-Channel MOSFET

 Very Small SOIC Package

 Low Profile (<1.1mm)

 Available in Tape & Reel

 Fast Switching

 Lead-Free

IRF7501TRPBF       Applications

This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications.