FDMQ8203

new-10%

Manufacturer part number:FDMQ8203

Manufacturer:ON Semiconductor

Description:FDMQ8203 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMQ8203 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	12-WDFN Exposed Pad
Number of Pins	12
Weight	210mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	GreenBridge™ PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	Other Transistors
Max Power Dissipation	2.5W
Base Part Number	FDMQ8203
Number of Elements	4
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.4A 2.6A
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Rise Time	2.8ns
Drain to Source Voltage (Vdss)	100V 80V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	2.7 ns
Continuous Drain Current (ID)	2.6A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.11Ohm
Drain to Source Breakdown Voltage	-80V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	3 V
Height	750μm
Length	5mm
Width	4.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free