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IRF7524D1PBF

IRF7524D1PBF

IRF7524D1PBF

Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO-8

SOT-23

IRF7524D1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Power Dissipation 1.25W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -1.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
RoHS Status RoHS Compliant

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