IRF7702 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7702 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Supplier Device Package
8-TSSOP
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-12V
Technology
MOSFET (Metal Oxide)
Current Rating
-8A
Power Dissipation-Max
1.5W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3470pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
81nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
8A
Input Capacitance
3.47nF
Rds On Max
14 mΩ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
IRF7702 Product Details
IRF7702 Description
International Rectifier's HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit, along with the ruggedized device design for which International Rectifier is renowned, gives the designer access to a very effective and dependable tool for load and battery management.
The footprint area of the TSSOP-8 package is 45% smaller than that of the conventional SO-8. In situations where printed circuit board space is at a premium, the TSSOP-8 is the perfect device. It may readily fit into extremely small surroundings like portable devices and PCMCIA cards thanks to the tiny profile (1.1mm).