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IRF7706TR

IRF7706TR

IRF7706TR

Infineon Technologies

MOSFET P-CH 30V 7A 8-TSSOP

SOT-23

IRF7706TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.51W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2211pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant

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