IXFE80N50

new-10%

Manufacturer part number:IXFE80N50

Manufacturer:IXYS

Description:MOSFET N-CH 500V 72A SOT-227B

Case Package:SOT-23

Datasheet:IXFE80N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	580W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	580W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	72A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	102 ns
Continuous Drain Current (ID)	72A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.055Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	6000 mJ
RoHS Status	RoHS Compliant