SUP60N02-4M5P-E3

new-10%

Manufacturer part number:SUP60N02-4M5P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 60A TO220AB

Case Package:SOT-23

Datasheet:SUP60N02-4M5P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.75W Ta 120W Tc
Element Configuration	Single
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	5.95nF
Drain to Source Resistance	4.5mOhm
Rds On Max	4.5 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant