Name: IRF7779L2TRPBF
Brand: Infineon Technologies
SKU: IRF7779L2TRPBF
Price: 7.44000 USD
Availability: InStock

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IRF7779L2TRPBF

Manufacturer part number:IRF7779L2TRPBF

Manufacturer:Infineon Technologies

Description:IRF7779L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7779L2TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	375A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	67A
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	270A
Avalanche Energy Rating (Eas)	270 mJ
Height	508μm
Length	9.144mm
Width	7.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRF7779L2TRPBF Product Details

IRF7779L2TRPBF Description

IRF7779L2TRPBF MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRF7779L2TRPBF Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of the IRF7779L2TRPBF circuit, it is suitable for Synchronous rectification, Motor control , Isolated DC-DC converters, switches ,Class D audio amplifierss.