IRF7779L2TRPBF

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IRF7779L2TRPBF

Manufacturer part number:IRF7779L2TRPBF

Manufacturer:Infineon Technologies

Description:IRF7779L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7779L2TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	11
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	375A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	67A
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	270A
Avalanche Energy Rating (Eas)	270 mJ
Height	508μm
Length	9.144mm
Width	7.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free