IRF7807 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7807 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C
8.3A Ta
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±12V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
8.3A
Drain-source On Resistance-Max
0.025Ohm
Pulsed Drain Current-Max (IDM)
66A
DS Breakdown Voltage-Min
30V
RoHS Status
Non-RoHS Compliant
IRF7807 Product Details
IRF7807 Description
IRF7807 is a HEXFET? single N-channel Power MOSFET offering fully characterized avalanche voltage and current. The Infineon IRF7807 is suitable for graphics cards and POL converters. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET IRF7807 is in the SOIC-8 package with 2.5W power dissipation.