SIB417AEDK-T1-GE3

new-10%

Manufacturer part number:SIB417AEDK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 9A PWRPACK

Case Package:SOT-23

Datasheet:SIB417AEDK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	32mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	878pF @ 4V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	18.5nC @ 5V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	8V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free