IXFH9N80

new-10%

Manufacturer part number:IXFH9N80

Manufacturer:IXYS

Description:Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247AD

Case Package:SOT-23

Datasheet:IXFH9N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	HiPerFET™
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.9Ohm
Drain to Source Breakdown Voltage	800V
Recovery Time	250 ns
RoHS Status	ROHS3 Compliant