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IRF7807VD1TRPBF

IRF7807VD1TRPBF

IRF7807VD1TRPBF

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

SOT-23

IRF7807VD1TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 25MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 8.3A
Number of Elements 1
Configuration Single
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 1.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 1.1 ns
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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