IRF7807VD1TRPBF

new-10%

Manufacturer part number:IRF7807VD1TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7807VD1TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	25MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	8.3A
Number of Elements	1
Configuration	Single
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	6.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.3A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±20V
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	1.1 ns
Continuous Drain Current (ID)	8.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free