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IXFK20N120

IXFK20N120

IXFK20N120

IXYS

MOSFET N-CH 1200V 20A TO-264

SOT-23

IXFK20N120 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 780W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.75Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 2000 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
25 $16.72400 $418.1

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