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SPP16N50C3HKSA1

SPP16N50C3HKSA1

SPP16N50C3HKSA1

Infineon Technologies

Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220AB

SOT-23

SPP16N50C3HKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 160W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 560V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 460 mJ
RoHS Status RoHS Compliant

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